當(dāng)前位置：首頁 » 技術(shù)支持 » 帶內(nèi)置熱敏電阻的NX1210AC-76.8MHz-STD-CTR-1晶體單元的研制

帶內(nèi)置熱敏電阻的NX1210AC-76.8MHz-STD-CTR-1晶體單元的研制

來源：*** 查看手機(jī)網(wǎng)址

掃一掃!

帶內(nèi)置熱敏電阻的NX1210AC-76.8MHz-STD-CTR-1晶體單元的研制

掃一掃!

瀏覽：- 發(fā)布日期：2023-06-12 18:57:42【大中小】

分享到：

帶內(nèi)置熱敏電阻的NX1210AC-76.8MHz-STD-CTR-1晶體單元的研制

We are pleased to inform you that Nihon Dempa Kogyo Co., Ltd. has developed a crystal unit (76.8MHz) with a built-in thermistor for NX1210AC (1.2×1.0×0.55mm-size) and has started sample shipment.

With the shift to 5G of mobile communications, the increasing frequency of clock sources used in chipsets has resulted in an increasing demand for low phase noise.

In particular, in order to accommodate carrier frequencies such as millimeter waves, it is necessary to increase the internal multiplication number. However, increasing the multiplication number increases the noise component, which may lead to reduce the reception sensitivity and communication efficiency due to degradation of modulation accuracy (signal phase and amplitude shift).

帶內(nèi)置熱敏電阻的NX1210AC-76.8MHz-STD-CTR-1晶體單元的研制 To improve phase noise by reducing the number of multiplications, it is required to increase the frequency of the crystal resonator as the reference oscillator from 38.4MHz to 76.8MHz. In order to achieve further noise reduction, it is also necessary to increase the drive level and maintain high stable temperature characteristics in addition to high-frequency operation.

To meet these difficult demands, we have realized a compact, high-frequency products by using high-quality synthetic quartz grown in-house and processing crystal blank with high precision using our won photolithography processing technology.

This product has the same characteristic as the NDK CRYSTAL NX1612SD_76.8MHz, which has obtained the first certification for Qualcomm Technologies smartphone chipset (Qualcomm® SnapdragonTM690, 750G and 480) which is under mass production, and it is a miniaturized product with a mounting area reduced to 38%.

Began supplying samples in May 2021. (NDK part number:EXS00A-CS10506)

The smartphone market for 5G is rapidly expanding, and we plan to work to ensure stable supplies of this product while expanding sales.

We will continue to contribute to the realization of a safe, secure and comfortable society through our quartz device and crystal application equipment businesses. 帶內(nèi)置熱敏電阻的NX1210AC-76.8MHz-STD-CTR-1晶體單元的研制

帶內(nèi)置熱敏電阻的NX1210AC-76.8MHz-STD-CTR-1晶體單元的研制

我們很高興地通知您，Nihon Dempa Kogyo Co.，Ltd. 已為NX1210AC晶振（尺寸1.2×1.0×0.55mm）開發(fā)了一個(gè)內(nèi)置熱敏電阻的晶體單元（76.8MHz），并已開始樣品發(fā)貨。

隨著移動(dòng)通信向5G的轉(zhuǎn)變，芯片組中使用的時(shí)鐘源頻率的增加，導(dǎo)致了對(duì)低相位噪聲的需求不斷增加。

特別地，為了適應(yīng)毫米波等載波頻率，需要增加內(nèi)部乘法數(shù)。然而，增加乘法數(shù)會(huì)增加噪聲分量，由于調(diào)制精度（信號(hào)相位和幅度轉(zhuǎn)移）的降低，可能導(dǎo)致接收靈敏度和通信效率的降低。

為了通過減少乘法次數(shù)來提高相位噪聲，需要將作為參考諧振器的晶體諧振器的頻率從38.4MHz提高到76.8MHz。為了進(jìn)一步降噪，除高頻操作外，還需要提高驅(qū)動(dòng)水平，保持高穩(wěn)定的溫度特性。

帶內(nèi)置熱敏電阻的NX1210AC-76.8MHz-STD-CTR-1晶體單元的研制, 為了滿足這些困難的需求，我們利用內(nèi)部種植的高品質(zhì)合成石英，利用先進(jìn)的光刻加工技術(shù)，實(shí)現(xiàn)了一種緊湊、高頻的產(chǎn)品。

該產(chǎn)品具有與NX1612SD_76.8MHz相同的特點(diǎn)，1210貼片石英晶振NX1612SD_76.8MHz首次獲得高通技術(shù)智能手機(jī)芯片組（高通®驍龍690,750G和480）認(rèn)證，正在量產(chǎn)，是一種小型化產(chǎn)品，安裝面積減少到38%。

從2021年5月開始提供樣品。（NDK零件號(hào)： EXS00A-CS10506）

5G智能手機(jī)市場(chǎng)正在迅速擴(kuò)張，我們計(jì)劃在擴(kuò)大銷售的同時(shí)確保該產(chǎn)品供應(yīng)穩(wěn)定。

我們將繼續(xù)通過石英設(shè)備和水晶應(yīng)用設(shè)備業(yè)務(wù)，為實(shí)現(xiàn)一個(gè)安全、安全、舒適的社會(huì)做出貢獻(xiàn)。

帶內(nèi)置熱敏電阻的NX1210AC-76.8MHz-STD-CTR-1晶體單元的研制

NX1210AC晶振特點(diǎn)：

在電路設(shè)計(jì)中具有內(nèi)置熱敏電阻的晶體單元

與晶體單元集成以消除空間（傳統(tǒng)上，晶體單元和溫度傳感器安裝在同一塊板上）。

晶體元件和溫度傳感器（熱敏電阻）安裝在同一密閉室中，可以檢測(cè)到更接近晶體元件的溫度，從而與傳統(tǒng)的晶體單元相比，提高了頻率溫度補(bǔ)償。

超緊湊，外形低調(diào)：1.2×1.0mm，最大值為高: 0.55mm)

表面安裝晶體單元（可用于回流焊）

回流溫度曲線（可用于無鉛焊接）

應(yīng)用于：通信設(shè)備

原廠編碼	晶振廠家	型號(hào)	頻率	頻率穩(wěn)定度	包裝/封裝
NX2016SA-26M-STD-CZS-2	NDK晶振	NX2016SA	26MHz	±25ppm	4-SMD, No Lead
NX2016SA-25.000M-STD-CZS-1	NDK晶振	NX2016SA	25MHz	±15ppm	4-SMD, No Lead
NX2016SA-26M-STD-CZS-1	NDK晶振	NX2016SA	26MHz	±15ppm	4-SMD, No Lead
NX1612AA-26MHZ STD-CSI-3	NDK晶振	NX1612AA	26MHz	±25ppm	4-SMD, No Lead
NX2016SA-26MHZ-EXS00A-CS06025	NDK晶振	NX2016SA	26MHz	±20ppm	4-SMD, No Lead
NX2016AB-26MHZ SB1	NDK晶振	NX2016AB	26MHz	±15ppm	4-SMD, No Lead
NX2016SA-24.9231M-CHP-CZS-9	NDK晶振	NX2016SA	24.9231MHz	±25ppm	4-SMD, No Lead
NX1612SA-32.000MHZ-CHP-CIS-3	NDK晶振	NX1612SA	32MHz	±20ppm	4-SMD, No Lead
NX1612AA-26MHZ-TI2	NDK晶振	NX1612AA	26MHz	±20ppm	4-SMD, No Lead
NX1612AA-26MHZ STD-CSI-1	NDK晶振	NX1612AA	26MHz	±20ppm	石英貼片晶振
NX1612AA-40MHZ-EXS00A-CS05020	NDK晶振	NX1612AA	40MHz	±30ppm	4-SMD, No Lead
NX2016AB-26MHZ ST1	NDK晶振	NX2016AB	26MHz	±20ppm	4-SMD, No Lead
NX2016AB-32MHZ ST2	NDK晶振	NX2016AB	32MHz	±20ppm	4-SMD, No Lead
NX2016AB-36MHZ ST3	NDK晶振	NX2016AB	36MHz	±20ppm	4-SMD, No Lead
NX2016AB-38.4MHZ ST4	NDK晶振	NX2016AB	38.4MHz	±20ppm	4-SMD, No Lead
NX2016AB-26MHZ SB2	NDK晶振	NX2016AB	26MHz	±15ppm	4-SMD, No Lead
NX2016AB-38.4MHZ SW1	NDK晶振	NX2016AB	38.4MHz	±10ppm	4-SMD, No Lead
NX2016AB-38.4MHZ SWW	NDK晶振	NX2016AB	38.4MHz	±20ppm	4-SMD, No Lead
NX2016AB-40MHZ SW2	NDK晶振	NX2016AB	40MHz	±10ppm	4-SMD, No Lead
NX2016AB-40MHZ SW2W	NDK晶振	NX2016AB	40MHz	±20ppm	4-SMD, No Lead