X1G0028610002石英晶體振蕩器X1G0044010008愛普生晶振X1G0041411002日本EPSON晶振 X1G0028610003日本SPXO晶振X1G0044010011石英振蕩子X1G0041411004 愛普生晶振 X1G0028610004石英晶振X1G0045411003石英晶體振蕩器X1G0041411006 石英振蕩子 X1G0028610005進(jìn)口有源晶振X1G0045411005日本SPXO晶振X1G0041411007石英晶體振蕩器 X1G0028610007普通有源晶振X1G0045411007石英晶振X1G0041411011日本SPXO晶振X1G0028610008晶振X1G0045510003進(jìn)口有源晶振X1G0041411012石英晶振X1G0028610009日本EPSON晶振X1G0045510004普通有源晶振X1G0041411013進(jìn)口有源晶振X1G0028610010愛普生晶振 X1G0045510007晶振X1G0041411014普通有源晶振X1G0028610011石英振蕩子
型號
頻率
尺寸
輸出波
電源電壓
VC范圍
絕對拉力范圍
頻率控制范圍
溫度
頻率容差
25°老化
最大
VG7050EAN
622.080000
MHz
7.00 x 5.00
x 1.50 mm
LV-PECL
2.970 to
3.630 V
1.65+/-1.35V
+/-0 to
+/-180 ppm
N/A ppm
-40 to +85
°C
+/-50 ppm
包括在頻率容限中
≤ 90 mA
VG7050EAN
622.080000
MHz
7.00 x 5.00
x 1.50 mm
LV-PECL
2.970 to
3.630 V
1.65+/-1.35V
+/-0 to
+/-180 ppm
N/A ppm
-40 to +85
°C
+/-50 ppm
包括在頻率容限中
≤ 90 mA
EV1409SAN
14.00 x 9.00
x 2.60 mm
Sine wave
3.135 to
3.465 V
1.65+/-1.65V
+/-50 ppm
-170/+120
ppm
-10 to +85
°C
-70/+120 ppm
包括在頻率容限中
≤ 90 mA
EV1409EAN
1986.819000
MHz
14.00 x 9.00
x 2.60 mm
LV-PECL
3.135 to
3.465 V
1.65+/-1.65V
+/-50 ppm
N/A ppm
-10 to +85
°C
-70/+120 ppm
包括在頻率容限中
≤ 90 mA
VG-4231CE
27.000000
MHz
3.20 x 2.50
x 1.05 mm
CMOS
1.600 to
2.000 V
0.9+/-0.9V
+/-75 ppm
+/-120 ppm
-40 to +85
°C
+/-37 ppm
+/-5ppm
≤ 1.2 mA
VG-4231CE
27.000000
MHz
3.20 x 2.50
x 1.05 mm
CMOS
3.000 to
3.600 V
1.65+/-1.65V
+/-95 ppm
+/-140 ppm
-40 to +85
°C
+/-37 ppm
+/-5ppm
≤ 7 mA
VG-4231CE
27.000000
MHz
3.20 x 2.50
x 1.05 mm
CMOS
3.000 to
3.600 V
1.65+/-1.65V
+/-100 ppm
+/-140 ppm
-20 to +70
°C
+/-30 ppm
+/-5ppm
≤ 7 mA
VG-4231CE
24.576000
MHz
3.20 x 2.50
x 1.05 mm
CMOS
3.000 to
3.600 V
1.65+/-1.65V
+/-95 ppm
+/-140 ppm
-40 to +85
°C
+/-37 ppm
+/-5ppm
≤ 7 mA
VG-4231CE
16.384000
MHz
3.20 x 2.50
x 1.05 mm
CMOS
3.000 to
3.600 V
1.65+/-1.65V
+/-100 ppm
+/-140 ppm
-20 to +70
°C
+/-30 ppm
+/-5ppm
≤ 7 mA
VG-4231CE
57.272720
MHz
3.20 x 2.50
x 1.05 mm
CMOS
3.000 to
3.600 V
1.65+/-1.65V
+/-95 ppm
+/-140 ppm
-40 to +85
°C
+/-37 ppm
+/-5ppm
≤ 7 mA
VG-4231CE
56.750000
MHz
3.20 x 2.50
x 1.05 mm
CMOS
3.000 to
3.600 V
1.65+/-1.65V
+/-95 ppm
+/-140 ppm
-40 to +85
°C
+/-37 ppm
+/-5ppm
≤ 7 mA
VG-4231CE
17.734475
MHz
3.20 x 2.50
x 1.05 mm
CMOS
3.000 to
3.600 V
1.65+/-1.65V
+/-95 ppm
+/-140 ppm
-40 to +85
°C
+/-37 ppm
+/-5ppm
≤ 7 mA
VG-4231CE
24.000000
MHz
3.20 x 2.50
x 1.05 mm
CMOS
3.000 to
3.600 V
1.65+/-1.65V
+/-100 ppm
+/-140 ppm
-20 to +70
°C
+/-30 ppm
+/-5ppm
≤ 7 mA
X1G0045510008日本EPSON晶振X1G0041411017晶振 X1G0028610013石英晶體振蕩器 X1G0045611003愛普生晶振 X1G0041411018日本EPSON晶振 X1G0028610024日本SPXO晶振 X1G0045611005石英振蕩子X1G0041411019愛普生晶振 X1G0028610042石英晶振 X1G0045611007 石英晶體振蕩器X1G0041411020石英振蕩子X1G0028610051進(jìn)口有源晶振X1M0003910017日本SPXO晶振X1G0041411602石英晶體振蕩器X1G0036910021普通有源晶振X1M0004010000石英晶振 X1G0041510003日本SPXO晶振 X1G0036910022 晶振 X1G0036910116日本SPXO晶振 X1G0041510004石英晶振X1G0036910034日本EPSON晶振 X1G0036910134石英晶振 X1G0041510007進(jìn)口有源晶振X1G0036910113愛普生晶振X1G0037710002進(jìn)口有源晶振 X1G0041510009普通有源晶振X1G0036910114石英振蕩子X1G0039210002普通有源晶振 X1G0041510013晶振X1G0036910115石英晶體振蕩器X1G0041411001晶振X1G0041510016日本EPSON晶振
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